IRF7314PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

58m Ω @ 2.9A, 4.5V

Factory Lead Time :

39 Weeks

Published :

1997

JEDEC-95 Code :

MS-012AA

DS Breakdown Voltage-Min :

20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

8

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

5.3A

Power - Max :

2W

Drain Current-Max (Abs) (ID) :

5.3A

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Qualification Status :

Not Qualified

Number of Elements :

2

Drain to Source Voltage (Vdss) :

20V

Drain-source On Resistance-Max :

0.058Ohm

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Packaging :

Tube

JESD-609 Code :

e3

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

Logic Level Gate

Avalanche Energy Rating (Eas) :

150 mJ

Pulsed Drain Current-Max (IDM) :

21A

Base Part Number :

IRF7314PBF

Power Dissipation-Max (Abs) :

1.4W

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

700mV @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE