IRF7313TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

29m Ω @ 5.8A, 10V

REACH SVHC :

No SVHC

Dual Supply Voltage :

30V

RoHS Status :

ROHS3 Compliant

Height :

1.75mm

Rise Time :

8.9ns

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

FET Type :

2 N-Channel (Dual)

Number of Channels :

2

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

30A

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Row Spacing :

6.3 mm

Continuous Drain Current (ID) :

6.5A

Max Junction Temperature (Tj) :

150°C

Voltage - Rated DC :

30V

Turn-Off Delay Time :

26 ns

Number of Pins :

8

Width :

4.05mm

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation :

2W

Length :

4.9784mm

Current Rating :

6.5A

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Fall Time (Typ) :

17 ns

Threshold Voltage :

1V

JESD-609 Code :

e3

Recovery Time :

68 ns

Turn On Delay Time :

8.1 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Mount :

Surface Mount

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

Published :

2002

Factory Lead Time :

12 Weeks

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Resistance :

29mOhm

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Radiation Hardening :

No

Number of Elements :

2

Drain to Source Breakdown Voltage :

30V

Base Part Number :

IRF7313PBF

Nominal Vgs :

1 V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

8

FET Feature :

Standard