IRF7313QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Resistance :

46mOhm

FET Feature :

Standard

Turn-Off Delay Time :

26 ns

Base Part Number :

IRF7313QPBF

Fall Time (Typ) :

17 ns

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Max Power Dissipation :

2W

Number of Pins :

8

Height :

1.4986mm

Rise Time :

8.9ns

Drain to Source Voltage (Vdss) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

6.5A

Length :

4.9784mm

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Width :

3.9878mm

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

6.5A

Min Operating Temperature :

-55°C

Power - Max :

2W

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On Max :

29 mΩ

Rds On (Max) @ Id, Vgs :

29mOhm @ 5.8A, 10V

Supplier Device Package :

8-SO

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Power Dissipation :

2W

Series :

HEXFET®

Turn On Delay Time :

8.1 ns

Input Capacitance :

650pF

Package / Case :

8-SOIC (0.154, 3.90mm Width)