IRF7311TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

700mV @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Radiation Hardening :

No

Turn On Delay Time :

8.1 ns

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 4.5V

Resistance :

29mOhm

Continuous Drain Current (ID) :

6.6A

Lead Free :

Lead Free

Length :

4.9784mm

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

2W

Voltage - Rated DC :

20V

Height :

1.4986mm

Turn-Off Delay Time :

38 ns

Packaging :

Tape and Reel (TR)

Threshold Voltage :

700mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Number of Terminations :

8

Base Part Number :

IRF7311PBF

JESD-609 Code :

e3

FET Type :

2 N-Channel (Dual)

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

12V

Recovery Time :

77 ns

Rise Time :

17ns

Series :

HEXFET®

Number of Elements :

2

Transistor Element Material :

SILICON

Number of Pins :

8

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Fall Time (Typ) :

31 ns

Max Power Dissipation :

2W

Avalanche Energy Rating (Eas) :

100 mJ

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Width :

3.9878mm

Current Rating :

6.6A