IRF7311TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 15V

JEDEC-95 Code :

MS-012AA

Rds On (Max) @ Id, Vgs :

29m Ω @ 6A, 4.5V

JESD-609 Code :

e3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Series :

HEXFET®

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

6.6A

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Drain Current-Max (Abs) (ID) :

6.6A

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Published :

2001

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Vgs(th) (Max) @ Id :

700mV @ 250μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Power - Max :

2W

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

100 mJ

Drain-source On Resistance-Max :

0.029Ohm

Number of Elements :

2

Pulsed Drain Current-Max (IDM) :

26A

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G8

Number of Terminations :

8