IRF7309TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

Lead Free :

Lead Free

Drain Current-Max (Abs) (ID) :

4A

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Current Rating :

4A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

12 Weeks

Additional Feature :

ULTRA LOW RESISTANCE

Row Spacing :

6.3 mm

Height :

1.4986mm

Threshold Voltage :

1V

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

Series :

HEXFET®

Base Part Number :

IRF7309PBF

Length :

4.9784mm

Transistor Application :

SWITCHING

Turn-Off Delay Time :

25 ns

Radiation Hardening :

No

FET Type :

N and P-Channel

Nominal Vgs :

1 V

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

Continuous Drain Current (ID) :

4A

Mount :

Surface Mount

Published :

2001

Power Dissipation :

1.4W

JESD-609 Code :

e3

Number of Terminations :

8

Pulsed Drain Current-Max (IDM) :

16A

Gate to Source Voltage (Vgs) :

20V

Resistance :

50mOhm

Max Power Dissipation :

1.4W

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

4A 3A

RoHS Status :

ROHS3 Compliant

Width :

4.05mm

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

FET Feature :

Standard