IRF7309PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Base Part Number :

IRF7309PBF

Pulsed Drain Current-Max (IDM) :

16A

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

JEDEC-95 Code :

MS-012AA

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

30V

Published :

2004

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

FET Feature :

Standard

Additional Feature :

ULTRA LOW RESISTANCE

Drain-source On Resistance-Max :

0.05Ohm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

HEXFET®

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

1.4W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Power - Max :

1.4W

Terminal Position :

Dual

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

Packaging :

Tube

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

4A 3A

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

4A

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

1V @ 250μA