IRF7309PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Terminal Position :

Dual

Terminal Finish :

Matte Tin (Sn)

FET Type :

N and P-Channel

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.05Ohm

Number of Terminations :

8

Additional Feature :

ULTRA LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 15V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 4.5V

Base Part Number :

IRF7309PBF

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-609 Code :

e3

Published :

2004

Series :

HEXFET®

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

30

Qualification Status :

Not Qualified

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

4A 3A

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

FET Feature :

Standard

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

4A

Number of Elements :

2

Power - Max :

1.4W

Mounting Type :

Surface Mount

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

16A

Transistor Application :

SWITCHING

JEDEC-95 Code :

MS-012AA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Power Dissipation-Max (Abs) :

1.4W

Operating Mode :

ENHANCEMENT MODE