IRF7306TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3.6A

Drain to Source Breakdown Voltage :

-30V

Number of Pins :

8

Contact Plating :

Tin

Terminal Form :

Gull wing

Current Rating :

-3.6A

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Length :

4.9784mm

Threshold Voltage :

-1V

Max Power Dissipation :

2W

Number of Terminations :

8

Base Part Number :

IRF7306PBF

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Application :

SWITCHING

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Mount :

Surface Mount

Additional Feature :

ULTRA LOW RESISTANCE

Operating Temperature :

-55°C~150°C TJ

Recovery Time :

80 ns

Resistance :

100MOhm

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2W

Height :

1.75mm

Pulsed Drain Current-Max (IDM) :

14A

Continuous Drain Current (ID) :

-3.6A

Row Spacing :

6.3 mm

Number of Elements :

2

Nominal Vgs :

-1 V

Turn-Off Delay Time :

25 ns

Drain to Source Voltage (Vdss) :

30V

Element Configuration :

Dual

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Fall Time (Typ) :

18 ns

Width :

4.05mm

JESD-609 Code :

e3

FET Type :

2 P-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Rise Time :

17ns

Radiation Hardening :

No

Max Junction Temperature (Tj) :

150°C

Number of Channels :

2

Voltage - Rated DC :

-30V

Operating Mode :

ENHANCEMENT MODE

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)