IRF7306TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

3A

Drain to Source Voltage (Vdss) :

30V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Lead Free :

Contains Lead

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Voltage - Rated DC :

-30V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

JESD-30 Code :

R-PDSO-G8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

RoHS Status :

Non-RoHS Compliant

Max Power Dissipation :

2W

Drain-source On Resistance-Max :

0.1Ohm

Current Rating :

-3.6A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Series :

HEXFET®

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

3.6A

FET Type :

2 P-Channel (Dual)

Published :

1997

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1V @ 250μA

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)