IRF7306QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Continuous Drain Current (ID) :

-3.6A

FET Type :

2 P-Channel (Dual)

Mount :

Surface Mount

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Min Operating Temperature :

-55°C

Length :

4.9784mm

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Nominal Vgs :

-1 V

Rise Time :

17ns

Current - Continuous Drain (Id) @ 25°C :

3.6A

Radiation Hardening :

No

Fall Time (Typ) :

18 ns

Power Dissipation :

2W

Max Operating Temperature :

150°C

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

100m Ω @ 1.8A, 10V

Base Part Number :

IRF7306QPBF

Height :

1.4986mm

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Width :

3.9878mm

Number of Pins :

8

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Max Power Dissipation :

2W

Turn-Off Delay Time :

25 ns

Published :

2014

REACH SVHC :

No SVHC

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2