IRF7304PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

4.3A

JEDEC-95 Code :

MS-012AA

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

2

Qualification Status :

Not Qualified

Number of Terminations :

8

Surface Mount :

yes

Drain-source On Resistance-Max :

0.09Ohm

Power - Max :

2W

JESD-30 Code :

R-PDSO-G8

Power Dissipation-Max (Abs) :

1.4W

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Published :

1997

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.2A, 4.5V

DS Breakdown Voltage-Min :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

700mV @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

4.3A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Base Part Number :

IRF7304PBF

Drain to Source Voltage (Vdss) :

20V

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

17A

Input Capacitance (Ciss) (Max) @ Vds :

610pF @ 15V

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate