IRF7303TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

8

JESD-609 Code :

e3

Rise Time :

21ns

Fall Time (Typ) :

7.7 ns

Element Configuration :

Dual

ECCN Code :

EAR99

Lead Free :

Lead Free

Power Dissipation :

2W

Terminal Finish :

Matte Tin (Sn)

Series :

HEXFET®

Length :

4.9784mm

Additional Feature :

ULTRA LOW RESISTANCE

Drain to Source Breakdown Voltage :

30V

Number of Pins :

8

Number of Elements :

2

Gate to Source Voltage (Vgs) :

20V

Width :

3.9878mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

6.8 ns

Resistance :

50mOhm

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Base Part Number :

IRF7303PBF

Mounting Type :

Surface Mount

FET Feature :

Standard

Turn-Off Delay Time :

22 ns

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

1997

Nominal Vgs :

1 V

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

2W

Current Rating :

4.9A

Voltage - Rated DC :

30V

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Threshold Voltage :

1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Mount :

Surface Mount

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Radiation Hardening :

No

Time@Peak Reflow Temperature-Max (s) :

30

Recovery Time :

71 ns

Continuous Drain Current (ID) :

4.9A

Height :

1.4986mm