IRF7303QTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

2

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Height :

1.4986mm

Fall Time (Typ) :

7.7 ns

Max Operating Temperature :

150°C

Length :

4.9784mm

Base Part Number :

IRF7303QPBF

Power Dissipation :

2W

Packaging :

Cut Tape (CT)

Min Operating Temperature :

-55°C

Width :

3.9878mm

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

4.9A

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

RoHS Status :

RoHS Compliant

Rise Time :

21ns

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

FET Type :

2 N-Channel (Dual)

Radiation Hardening :

No

Max Power Dissipation :

2W

Published :

2010

Number of Pins :

8

Turn-Off Delay Time :

22 ns

FET Feature :

Standard

Turn On Delay Time :

6.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR