IRF7303PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

4.9A

Drain to Source Voltage (Vdss) :

30V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Standard

Factory Lead Time :

22 Weeks

Drain-source On Resistance-Max :

0.05Ohm

Mounting Type :

Surface Mount

Number of Terminations :

8

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

1997

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Drain Current-Max (Abs) (ID) :

4.9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PDSO-G8

Base Part Number :

IRF7303PBF

Transistor Application :

SWITCHING

JEDEC-95 Code :

MS-012AA

Series :

HEXFET®

Time@Peak Reflow Temperature-Max (s) :

30

Power - Max :

2W

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tube

Power Dissipation-Max (Abs) :

1.4W

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Number of Elements :

2

Vgs(th) (Max) @ Id :

1V @ 250μA

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.4A, 10V

Pulsed Drain Current-Max (IDM) :

20A

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

JESD-609 Code :

e3