IRF7301TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

4.9784mm

Mounting Type :

Surface Mount

Nominal Vgs :

700 mV

Number of Elements :

2

Row Spacing :

6.3 mm

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

12V

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Threshold Voltage :

700mV

Radiation Hardening :

No

Base Part Number :

IRF7301PBF

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

32 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Current Rating :

5.2A

Transistor Element Material :

SILICON

Lead Free :

Contains Lead, Lead Free

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Published :

1997

Width :

3.9878mm

Transistor Application :

SWITCHING

Turn On Delay Time :

9 ns

Terminal Form :

Gull wing

Fall Time (Typ) :

51 ns

Drain to Source Breakdown Voltage :

20V

Element Configuration :

Dual

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.6A, 4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Terminations :

8

Additional Feature :

ULTRA LOW RESISTANCE

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

700mV @ 250μA

Continuous Drain Current (ID) :

5.2A

Rise Time :

42ns

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Height :

1.4986mm

Recovery Time :

44 ns

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Resistance :

50mOhm

Max Power Dissipation :

2W

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

20V

Series :

HEXFET®

Power Dissipation :

2W