IRF7203TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Drain to Source Voltage (Vdss) :

20V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2008

Transistor Element Material :

SILICON

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G8

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Packaging :

Tape and Reel (TR)

Additional Feature :

LOGIC LEVEL COMPATIBLE

DS Breakdown Voltage-Min :

20V

Drain-source On Resistance-Max :

0.1Ohm

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Number of Terminations :

8

ECCN Code :

EAR99

Terminal Form :

Gull wing

Drain Current-Max (Abs) (ID) :

4.3A

Input Capacitance (Ciss) (Max) @ Vds :

750pF @ 20V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

100m Ω @ 2A, 10V