IRF7105TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

8

Number of Elements :

2

Fall Time (Typ) :

37 ns

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Nominal Vgs :

3 V

Drain to Source Breakdown Voltage :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

100m Ω @ 1A, 10V

Factory Lead Time :

12 Weeks

Pulsed Drain Current-Max (IDM) :

14A

Max Power Dissipation :

2W

Threshold Voltage :

1V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3.5A 2.3A

Terminal Position :

Dual

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Base Part Number :

IRF7105PBF

Rise Time :

13ns

Resistance :

100MOhm

Continuous Drain Current (ID) :

3.5A

Number of Channels :

2

Power Dissipation :

2W

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Length :

4.9784mm

Additional Feature :

ULTRA LOW RESISTANCE

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 15V

FET Type :

N and P-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Turn On Delay Time :

7 ns

ECCN Code :

EAR99

Max Junction Temperature (Tj) :

150°C

Height :

1.75mm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Width :

3.9878mm

Current Rating :

3.5A

Turn-Off Delay Time :

45 ns

Lead Free :

Lead Free

Number of Terminations :

8

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

FET Feature :

Standard

Mount :

Surface Mount