IRF540ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Specialized ICs

Lead Free :

Lead Free

Number of Pins :

3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Power Dissipation-Max :

92W Tc

Transistor Element Material :

SILICON

Turn-Off Delay Time :

43 ns

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

100V

ECCN Code :

EAR99

Rise Time :

51ns

Series :

HEXFET®

REACH SVHC :

No SVHC

Number of Terminations :

3

FET Type :

N-Channel

Width :

4.826mm

Nominal Vgs :

4 V

Case Connection :

DRAIN

Current Rating :

36A

Continuous Drain Current (ID) :

36A

Length :

10.668mm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Voltage - Rated DC :

100V

Height :

9.65mm

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Mount :

Through Hole

Resistance :

26.5mOhm

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Power Dissipation :

92W

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Element Configuration :

Single

JESD-609 Code :

e3

Turn On Delay Time :

15 ns

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Factory Lead Time :

12 Weeks

Fall Time (Typ) :

39 ns

Vgs(th) (Max) @ Id :

4V @ 250µA