IPW65R660CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Packaging :

Tube

Turn On Delay Time :

9 ns

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

62.5W Tc

Factory Lead Time :

16 Weeks

Qualification Status :

Not Qualified

Turn-Off Delay Time :

40 ns

Pin Count :

3

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.66Ohm

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

6A

Pbfree Code :

yes

Transistor Application :

SWITCHING

Terminal Position :

Single

Package / Case :

TO-247-3

Rise Time :

8ns

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

6A

JESD-609 Code :

e3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

700V

RoHS Status :

RoHS Compliant

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

650V

Current - Continuous Drain (Id) @ 25°C :

6A Tc

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

660m Ω @ 2.1A, 10V

Mounting Type :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4.5V @ 200μA

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Power Dissipation :

62.5W

Input Capacitance (Ciss) (Max) @ Vds :

615pF @ 100V

Series :

CoolMOS™

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3