IPW65R420CFDFKSA1
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- Mfr.Part #
- IPW65R420CFDFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 8.7A TO247-3
- Stock
- 2
- In Stock ：
- 2
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 38 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 870pF @ 100V
- Max Dual Supply Voltage :
- 650V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 420m Ω @ 3.4A, 10V
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rise Time :
- 7ns
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Series :
- CoolMOS™
- Avalanche Energy Rating (Eas) :
- 227 mJ
- Drain-source On Resistance-Max :
- 0.42Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 83.3W Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Factory Lead Time :
- 18 Weeks
- Package / Case :
- TO-247-3
- Current - Continuous Drain (Id) @ 25°C :
- 8.7A Tc
- Published :
- 2008
- Packaging :
- Tube
- JESD-30 Code :
- R-PSFM-T3
- Vgs (Max) :
- ±20V
- Continuous Drain Current (ID) :
- 8.7A
- Operating Temperature :
- -55°C~150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 27A
- Mount :
- Through Hole
- Terminal Position :
- Single
- Fall Time (Typ) :
- 8 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Number of Elements :
- 1
- Turn On Delay Time :
- 10 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4.5V @ 340μA
- Power Dissipation :
- 83.3W
- Pin Count :
- 3
- Datasheets
- IPW65R420CFDFKSA1
N-Channel Tube 420m Ω @ 3.4A, 10V ±20V 870pF @ 100V 32nC @ 10V TO-247-3
IPW65R420CFDFKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 227 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 870pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.7A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 38 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 27A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW65R420CFDFKSA1 Features
the avalanche energy rating (Eas) is 227 mJ
a continuous drain current (ID) of 8.7A
the turn-off delay time is 38 ns
based on its rated peak drain current 27A.
IPW65R420CFDFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R420CFDFKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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