IPW65R280E6
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- Mfr.Part #
- IPW65R280E6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- 650 V COOLMOS E6 POWER MOSFET
- Stock
- 3,217
- In Stock ：
- 3,217
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Max Dual Supply Voltage :
- 650V
- Terminal Position :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Mounting Type :
- Through Hole
- Published :
- 2008
- Package / Case :
- TO-247-3
- Drain-source On Resistance-Max :
- 0.28Ohm
- Series :
- CoolMOS™
- Terminal Finish :
- Tin (Sn)
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Turn-Off Delay Time :
- 76 ns
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 39A
- Continuous Drain Current (ID) :
- 13.8A
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 104W Tc
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 4.4A, 10V
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Power Dissipation :
- 104W
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 9ns
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 11 ns
- Datasheets
- IPW65R280E6
N-Channel Tube 280m Ω @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V TO-247-3
IPW65R280E6FKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 290 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 950pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13.8A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 76 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 39A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW65R280E6FKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 76 ns
based on its rated peak drain current 39A.
IPW65R280E6FKSA1 Applications
There are a lot of Infineon Technologies
IPW65R280E6FKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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