IPW65R280C6
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- Mfr.Part #
- IPW65R280C6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- 650 V COOLMOS E6 POWER MOSFET
- Stock
- 950
- In Stock ：
- 950
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Drain-source On Resistance-Max :
- 0.28Ohm
- Continuous Drain Current (ID) :
- 13.8A
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 39A
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 12 Weeks
- Turn On Delay Time :
- 13 ns
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 12 ns
- Power Dissipation :
- 104W
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 105 ns
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 950pF @ 100V
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 13.8A Tc
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 4.4A, 10V
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Series :
- CoolMOS™
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Packaging :
- Tube
- Gate to Source Voltage (Vgs) :
- 20V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Rise Time :
- 11ns
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 104W Tc
- Package / Case :
- TO-247-3
- Published :
- 2009
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 650V
- Datasheets
- IPW65R280C6
N-Channel Tube 280m Ω @ 4.4A, 10V ±20V 950pF @ 100V 45nC @ 10V TO-247-3
IPW65R280C6FKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 290 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 950pF @ 100V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 105 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 39A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.In addition to reducing power consumption, this device uses drive voltage (10V).
IPW65R280C6FKSA1 Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 13.8A
the turn-off delay time is 105 ns
based on its rated peak drain current 39A.
IPW65R280C6FKSA1 Applications
There are a lot of Infineon Technologies
IPW65R280C6FKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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