IPW65R190E6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Package / Case :

TO-247-3

Terminal Position :

Single

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Reach Compliance Code :

Compliant

Drain to Source Voltage (Vdss) :

650V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 100V

Pbfree Code :

yes

Packaging :

Tube

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

66A

Drain-source On Resistance-Max :

0.19Ohm

Vgs(th) (Max) @ Id :

3.5V @ 730µA

JESD-30 Code :

R-PSFM-T3

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

151W Tc

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

JESD-609 Code :

e3

Published :

2008

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

485 mJ

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

73nC @ 10V

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

650V

Rds On (Max) @ Id, Vgs :

190m Ω @ 7.3A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Elements :

1