IPW65R190E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Tradename :

CoolMOS

Continuous Drain Current Id :

20.2

Number of Channels :

1 Channel

Package Type :

TO-247

Mounting :

Through Hole

Height :

21.1 mm

Width :

5.21 mm

FET Feature :

-

Supplier Device Package :

PG-TO247-3-41

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.3A, 10V

Maximum Operating Temperature :

+ 150 C

Vgs (Max) :

±20V

Operating Temp Range :

-55C to 150C

Channel Type :

N

Current - Continuous Drain (Id) @ 25°C :

20.2A (Tc)

Polarity :

N

Drive Voltage (Max Rds On, Min Rds On) :

10V

Pin Count :

3 +Tab

Rad Hardened :

No

Input Capacitance (Ciss) (Max) @ Vds :

1620 pF @ 100 V

Product Type :

MOSFET

Type :

Power MOSFET

Rise Time :

12 ns

Drain to Source Voltage (Vdss) :

650 V

Brand :

Infineon Technologies

Configuration :

Single

Power Dissipation (Max) :

151W (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

CoolMOS E6

Product Status :

Active

Technology :

Si

Transistor Type :

1 N-Channel

Manufacturer :

Infineon

Transistor Polarity :

N-Channel

Operating Temperature Classification :

Military

Continuous Drain Current :

20.2(A)

Channel Mode :

Enhancement

Length :

16.13 mm

Packaging :

Rail/Tube

Vgs(th) (Max) @ Id :

3.5V @ 730µA

Package / Case :

TO-247-3

Mounting Type :

Through Hole

Power Dissipation :

151

FET Type :

N-Channel

Package :

Bulk

Mounting Style :

Through Hole

Number of Elements :

1

Product Category :

MOSFET

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 10 V

RoHS :

Details

Gate-Source Voltage (Max) :

20(V)

Drain-Source On-Volt :

700(V)

Subcategory :

MOSFETs