IPW65R190E6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation (Max) :

151W (Tc)

Technology :

Si

RoHS :

Details

Mounting Type :

Through Hole

Operating Temp Range :

-55C to 150C

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 10 V

FET Feature :

-

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.3A, 10V

Supplier Device Package :

PG-TO247-3-41

Manufacturer :

Infineon

Height :

21.1 mm

Configuration :

Single

Operating Temperature :

-55°C ~ 150°C (TJ)

Length :

16.13 mm

Package / Case :

TO-247-3

Pin Count :

3 +Tab

Mounting :

Through Hole

Polarity :

N

Brand :

Infineon Technologies

Current - Continuous Drain (Id) @ 25°C :

20.2A (Tc)

Subcategory :

MOSFETs

Channel Mode :

Enhancement

Rad Hardened :

No

Continuous Drain Current Id :

20.2

Continuous Drain Current :

20.2(A)

Operating Temperature Classification :

Military

Gate-Source Voltage (Max) :

20(V)

Packaging :

Rail/Tube

FET Type :

N-Channel

Rise Time :

12 ns

Transistor Type :

1 N-Channel

Product Status :

Active

Product Category :

MOSFET

Input Capacitance (Ciss) (Max) @ Vds :

1620 pF @ 100 V

Package Type :

TO-247

Width :

5.21 mm

Power Dissipation :

151

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Vgs (Max) :

±20V

Number of Channels :

1 Channel

Drain to Source Voltage (Vdss) :

650 V

Number of Elements :

1

Type :

Power MOSFET

Minimum Operating Temperature :

- 55 C

Mounting Style :

Through Hole

Series :

CoolMOS E6

Channel Type :

N

Drain-Source On-Volt :

700(V)

Vgs(th) (Max) @ Id :

3.5V @ 730µA

Package :

Bulk

Transistor Polarity :

N-Channel

Tradename :

CoolMOS