IPW65R190CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1850pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

484 mJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

190m Ω @ 7.3A, 10V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Drain Current-Max (Abs) (ID) :

17.5A

Pulsed Drain Current-Max (IDM) :

57.2A

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

151W Tc

Drain-source On Resistance-Max :

0.19Ohm

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

650V

Vgs(th) (Max) @ Id :

4.5V @ 730μA

Terminal Position :

Single

FET Type :

N-Channel

Number of Elements :

1

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

17.5A Tc

Published :

2008

Number of Terminations :

3

Surface Mount :

No

Package / Case :

TO-247-3

Drain to Source Voltage (Vdss) :

650V

Transistor Element Material :

SILICON