IPW65R190CFDAFKSA1
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- Mfr.Part #
- IPW65R190CFDAFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 17.5A TO247-3
- Stock
- 10
- In Stock ：
- 10
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4.5V @ 700μA
- Avalanche Energy Rating (Eas) :
- 484 mJ
- Additional Feature :
- High Reliability
- Length :
- 16.03mm
- Turn-Off Delay Time :
- 53.2 ns
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-247-3
- Pulsed Drain Current-Max (IDM) :
- 57.2A
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 5.16mm
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.19Ohm
- Input Capacitance (Ciss) (Max) @ Vds :
- 1850pF @ 100V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.3A, 10V
- Published :
- 2012
- Number of Terminations :
- 3
- Operating Temperature :
- -40°C~150°C TJ
- Power Dissipation-Max :
- 151W Tc
- Max Dual Supply Voltage :
- 650V
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Series :
- Automotive, AEC-Q101, CoolMOS™
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 17.5A
- Vgs (Max) :
- ±20V
- Height :
- 21.1mm
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Datasheets
- IPW65R190CFDAFKSA1
N-Channel Tube 190m Ω @ 7.3A, 10V ±20V 1850pF @ 100V 68nC @ 10V TO-247-3
IPW65R190CFDAFKSA1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 484 mJ.A device's maximal input capacitance is 1850pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17.5A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 53.2 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 57.2A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.By using 650V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPW65R190CFDAFKSA1 Features
the avalanche energy rating (Eas) is 484 mJ
a continuous drain current (ID) of 17.5A
the turn-off delay time is 53.2 ns
based on its rated peak drain current 57.2A.
IPW65R190CFDAFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R190CFDAFKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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