IPW65R190CFD7AXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Mounting Style :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1291 pF @ 400 V

Maximum Operating Temperature :

+ 150 C

Channel Mode :

Enhancement

Transistor Polarity :

N-Channel

Drain to Source Voltage (Vdss) :

650 V

Base Product Number :

IPW65R190

Gate Charge (Qg) (Max) @ Vgs :

28 nC @ 10 V

Channel Type :

N Channel

Vgs (Max) :

±20V

Qualification :

AEC-Q101

Rds On (Max) @ Id, Vgs :

190mOhm @ 6.4A, 10V

Minimum Operating Temperature :

- 40 C

Power Dissipation :

77W

Mounting Type :

Through Hole

Power Dissipation (Max) :

77W (Tc)

Operating Temperature :

-40°C ~ 150°C (TJ)

Number of Channels :

1 Channel

Current - Continuous Drain (Id) @ 25°C :

14A (Tc)

Product Status :

Active

Vgs(th) (Max) @ Id :

4.5V @ 320µA

FET Feature :

-

Supplier Device Package :

PG-TO247-3

FET Type :

N-Channel

Series :

Automotive, AEC-Q101, CoolMOS?

Continuous Drain Current Id :

14A

Package / Case :

TO-247-3