IPW65R190C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Product Type :

MOSFET

Turn-On Delay Time :

13 ns

Supplier Device Package :

PG-TO247-3-41

Transistor Polarity :

N-Channel

Drain to Source Resistance :

190 mΩ

Width :

5.21 mm

Current - Continuous Drain (Id) @ 25°C :

20.2A (Tc)

Brand :

Infineon Technologies

Package Quantity :

240

Vgs(th) (Max) @ Id :

3.5V @ 730µA

Maximum Operating Temperature :

+ 150 C

FET Type :

N-Channel

Product Category :

MOSFET

Height :

21.1 mm

Turn-Off Delay Time :

133 ns

Drive Voltage (Max Rds On, Min Rds On) :

10V

Drain to Source Breakdown Voltage :

700 V

Gate Charge (Qg) (Max) @ Vgs :

73 nC @ 10 V

Continuous Drain Current (ID) :

20.2 A

Transistor Type :

1 N-Channel

Product Status :

Active

Package :

Bulk

Max Power Dissipation :

151 W

RoHS :

Details

Lifecycle Status :

Obsolete (Last Updated: 2 years ago)

Rds On (Max) @ Id, Vgs :

190mOhm @ 7.3A, 10V

Gate to Source Voltage (Vgs) :

20 V

Technology :

Si

Configuration :

Single

Manufacturer :

Infineon

Drain to Source Voltage (Vdss) :

650 V

Minimum Operating Temperature :

- 55 C

Series :

CoolMOS C6

Mounting Style :

Through Hole

Rise Time :

12 ns

Power Dissipation (Max) :

151W (Tc)

Input Capacitance :

1.62 nF

Subcategory :

MOSFETs

Tradename :

CoolMOS

Packaging :

Tube

Operating Temperature :

-55°C ~ 150°C (TJ)

Number of Pins :

3

Power Dissipation :

151 W

Mounting Type :

Through Hole

On-State Resistance :

190 mΩ

Max Operating Temperature :

150 °C

Input Capacitance (Ciss) (Max) @ Vds :

1620 pF @ 100 V

Length :

16.13 mm

Number of Channels :

1 Channel

Rds On Max :

190 mΩ

Channel Mode :

Enhancement

Min Operating Temperature :

-55 °C

Package / Case :

TO-247-3

Vgs (Max) :

±20V

FET Feature :

-