IPW65R150CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4.5V @ 900μA

Turn On Delay Time :

12.4 ns

Pulsed Drain Current-Max (IDM) :

72A

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

22.4A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2340pF @ 100V

Lead Free :

Lead Free

Published :

2011

Power Dissipation :

195.3W

Drain to Source Breakdown Voltage :

700V

Gate Charge (Qg) (Max) @ Vgs :

86nC @ 10V

Package / Case :

TO-247-3

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

5.6 ns

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

150m Ω @ 9.3A, 10V

JESD-609 Code :

e3

Series :

CoolMOS™

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSFM-T3

Max Dual Supply Voltage :

650V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

195.3W Tc

Turn-Off Delay Time :

52.8 ns

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

22.4A

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Rise Time :

7.6ns

Transistor Element Material :

SILICON

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE