IPW65R150CFDAFKSA1
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- Mfr.Part #
- IPW65R150CFDAFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 22.4A TO247-3
- Stock
- 1,440
- In Stock ：
- 1,440
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 22.4A Tc
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 9.3A, 10V
- Number of Pins :
- 3
- Width :
- 5.16mm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Pin Count :
- 3
- Packaging :
- Tube
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 72A
- Operating Temperature :
- -40°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Through Hole
- Avalanche Energy Rating (Eas) :
- 614 mJ
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Additional Feature :
- High Reliability
- Vgs(th) (Max) @ Id :
- 4.5V @ 900μA
- Height :
- 21.1mm
- Gate to Source Voltage (Vgs) :
- 30V
- Factory Lead Time :
- 18 Weeks
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2340pF @ 100V
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 195.3W Tc
- Turn On Delay Time :
- 12.4 ns
- Published :
- 2008
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- Length :
- 16.03mm
- Terminal Finish :
- Tin (Sn)
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Mounting Type :
- Through Hole
- Continuous Drain Current (ID) :
- 22.4A
- Drain-source On Resistance-Max :
- 0.15Ohm
- Turn-Off Delay Time :
- 52.8 ns
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Package / Case :
- TO-247-3
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 650V
- Datasheets
- IPW65R150CFDAFKSA1
N-Channel Tube 150m Ω @ 9.3A, 10V ±20V 2340pF @ 100V 86nC @ 10V TO-247-3
IPW65R150CFDAFKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 614 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2340pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 22.4A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 52.8 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12.4 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Powered by 650V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW65R150CFDAFKSA1 Features
the avalanche energy rating (Eas) is 614 mJ
a continuous drain current (ID) of 22.4A
the turn-off delay time is 52.8 ns
based on its rated peak drain current 72A.
IPW65R150CFDAFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R150CFDAFKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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