IPW65R110CFDFKSA2
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- Mfr.Part #
- IPW65R110CFDFKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 31.2A TO247-3
- Stock
- 208
- In Stock ：
- 208
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.3mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 3240pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 277.8W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 31.2A Tc
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 12.7A, 10V
- Package / Case :
- TO-247-3
- Series :
- CoolMOS™ CFD2
- Drain to Source Voltage (Vdss) :
- 650V
- Datasheets
- IPW65R110CFDFKSA2
N-Channel Tube 110m Ω @ 12.7A, 10V ±20V 3240pF @ 100V 118nC @ 10V 650V TO-247-3
IPW65R110CFDFKSA2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3240pF @ 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 650V.Using drive voltage (10V) reduces this device's overall power consumption.
IPW65R110CFDFKSA2 Features
a 650V drain to source voltage (Vdss)
IPW65R110CFDFKSA2 Applications
There are a lot of Infineon Technologies
IPW65R110CFDFKSA2 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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