IPW65R110CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

31.2A Tc

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

6 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Factory Lead Time :

18 Weeks

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

Series :

CoolMOS™

Operating Temperature :

-55°C~150°C TJ

Rise Time :

11ns

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3240pF @ 100V

Number of Terminations :

3

Max Dual Supply Voltage :

650V

Turn On Delay Time :

16 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Package / Case :

TO-247-3

Continuous Drain Current (ID) :

31.2A

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

845 mJ

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 1.3mA

Number of Pins :

3

JESD-609 Code :

e3

Lead Free :

Lead Free

Turn-Off Delay Time :

68 ns

Power Dissipation-Max :

277.8W Tc

Transistor Application :

SWITCHING

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

118nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

99.6A

Rds On (Max) @ Id, Vgs :

110m Ω @ 12.7A, 10V