IPW65R110CFDAFKSA1
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- Mfr.Part #
- IPW65R110CFDAFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 31.2A TO247-3
- Stock
- 15,415
- In Stock ：
- 15,415
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 18 Weeks
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 6 ns
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 68 ns
- Pin Count :
- 3
- Power Dissipation-Max :
- 277.8W Tc
- Rds On (Max) @ Id, Vgs :
- 110m Ω @ 12.7A, 10V
- Lead Free :
- Lead Free
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 99.6A
- Gate Charge (Qg) (Max) @ Vgs :
- 118nC @ 10V
- Vgs(th) (Max) @ Id :
- 4.5V @ 1.3mA
- Operating Temperature :
- -40°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Mount :
- Through Hole
- JESD-609 Code :
- e3
- Max Dual Supply Voltage :
- 650V
- Published :
- 2008
- Additional Feature :
- High Reliability
- Terminal Position :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 31.2A Tc
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Continuous Drain Current (ID) :
- 31.2A
- Rise Time :
- 11ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 3240pF @ 100V
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 845 mJ
- Turn On Delay Time :
- 16 ns
- Drain-source On Resistance-Max :
- 0.11Ohm
- Datasheets
- IPW65R110CFDAFKSA1
N-Channel Tube 110m Ω @ 12.7A, 10V ±20V 3240pF @ 100V 118nC @ 10V TO-247-3
IPW65R110CFDAFKSA1 Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 845 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3240pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 31.2A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 68 ns.Peak drain current for this device is 99.6A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.This device supports dual supply voltages maximally powered by 650V.Using drive voltage (10V) reduces this device's overall power consumption.
IPW65R110CFDAFKSA1 Features
the avalanche energy rating (Eas) is 845 mJ
a continuous drain current (ID) of 31.2A
the turn-off delay time is 68 ns
based on its rated peak drain current 99.6A.
IPW65R110CFDAFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R110CFDAFKSA1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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