IPW65R095C7XKSA1
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- Mfr.Part #
- IPW65R095C7XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 24A TO247
- Stock
- 3,941
- In Stock ：
- 3,941
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 590μA
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 24A Tc
- Max Dual Supply Voltage :
- 650V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2140pF @ 400V
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- Max Operating Temperature :
- 150°C
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Drain to Source Voltage (Vdss) :
- 650V
- Turn On Delay Time :
- 17 ns
- Power Dissipation-Max :
- 128W Tc
- Rise Time :
- 14ns
- Package / Case :
- TO-247-3
- Drain to Source Resistance :
- 84mOhm
- Continuous Drain Current (ID) :
- 24A
- Supplier Device Package :
- PG-TO247
- Vgs (Max) :
- ±20V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Published :
- 2008
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Input Capacitance :
- 2.14nF
- FET Type :
- N-Channel
- Halogen Free :
- Halogen Free
- Rds On (Max) @ Id, Vgs :
- 95mOhm @ 11.8A, 10V
- Series :
- CoolMOS™
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 7 ns
- Rds On Max :
- 95 mΩ
- Turn-Off Delay Time :
- 72 ns
- Factory Lead Time :
- 18 Weeks
- Mount :
- Through Hole
- Datasheets
- IPW65R095C7XKSA1
N-Channel Tube 95mOhm @ 11.8A, 10V ±20V 2140pF @ 400V 45nC @ 10V 650V TO-247-3
IPW65R095C7XKSA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2140pF @ 400V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 84mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by 650V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPW65R095C7XKSA1 Features
a continuous drain current (ID) of 24A
the turn-off delay time is 72 ns
single MOSFETs transistor is 84mOhm
a 650V drain to source voltage (Vdss)
IPW65R095C7XKSA1 Applications
There are a lot of Infineon Technologies
IPW65R095C7XKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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