IPW65R080CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

137A

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

391W Tc

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

80m Ω @ 17.6A, 10V

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

43.3A

Drain-source On Resistance-Max :

0.08Ohm

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pbfree Code :

yes

JESD-609 Code :

e3

Published :

2008

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Avalanche Energy Rating (Eas) :

1160 mJ

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Terminal Position :

Single

Factory Lead Time :

18 Weeks

Packaging :

Tube

Number of Elements :

1

Transistor Application :

SWITCHING

Surface Mount :

No

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

5030pF @ 100V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

43.3A Tc

Vgs(th) (Max) @ Id :

4.5V @ 1.76mA

DS Breakdown Voltage-Min :

650V

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

700V

JESD-30 Code :

R-PSFM-T3