IPW65R080CFDFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Series :

CoolMOS™

Drain-source On Resistance-Max :

0.08Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.5V @ 1.76mA

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-247-3

Rds On (Max) @ Id, Vgs :

80m Ω @ 17.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

5030pF @ 100V

DS Breakdown Voltage-Min :

650V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Power Dissipation-Max :

391W Tc

Factory Lead Time :

18 Weeks

Pin Count :

3

Terminal Finish :

Tin (Sn)

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

43.3A Tc

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

700V

ECCN Code :

EAR99

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Number of Elements :

1

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Terminations :

3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

43.3A

Pulsed Drain Current-Max (IDM) :

137A

Avalanche Energy Rating (Eas) :

1160 mJ