IPW65R070C6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Turn On Delay Time :

17 ns

Fall Time (Typ) :

6 ns

Series :

CoolMOS™

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 100V

Drain-source On Resistance-Max :

0.07Ohm

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Max Dual Supply Voltage :

650V

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

53.5A Tc

Pbfree Code :

yes

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

53.5A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

90 ns

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

FET Type :

N-Channel

Number of Elements :

1

Number of Pins :

3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

391W Tc

Transistor Element Material :

SILICON

Pin Count :

3

Rds On (Max) @ Id, Vgs :

70m Ω @ 17.6A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Published :

2008

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.5V @ 1.76mA