IPW65R048CFDAFKSA1
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- Mfr.Part #
- IPW65R048CFDAFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 63.3A TO247-3
- Stock
- 18,101
- In Stock ：
- 18,101
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- Automotive, AEC-Q101, CoolMOS™
- Terminal Position :
- Single
- Rise Time :
- 10ns
- Fall Time (Typ) :
- 4 ns
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 85 ns
- Max Dual Supply Voltage :
- 650V
- Published :
- 2008
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 2.9mA
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 48m Ω @ 29.4A, 10V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 18 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 63.3A
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 63.3A Tc
- Mounting Type :
- Through Hole
- Package / Case :
- TO-247-3
- Additional Feature :
- High Reliability
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 228A
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.048Ohm
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 7440pF @ 100V
- Turn On Delay Time :
- 22 ns
- Power Dissipation-Max :
- 500W Tc
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 500W
- Datasheets
- IPW65R048CFDAFKSA1
N-Channel Tube 48m Ω @ 29.4A, 10V ±20V 7440pF @ 100V 270nC @ 10V TO-247-3
IPW65R048CFDAFKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 7440pF @ 100V.This device conducts a continuous drain current (ID) of 63.3A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 85 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 228A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 650V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPW65R048CFDAFKSA1 Features
a continuous drain current (ID) of 63.3A
the turn-off delay time is 85 ns
based on its rated peak drain current 228A.
IPW65R048CFDAFKSA1 Applications
There are a lot of Infineon Technologies
IPW65R048CFDAFKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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