IPW65R037C6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-247-3

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

140 ns

Transistor Element Material :

SILICON

Number of Terminations :

3

Published :

2008

Factory Lead Time :

12 Weeks

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Mount :

Through Hole

Fall Time (Typ) :

7 ns

Power Dissipation :

500W

Power Dissipation-Max :

500W Tc

Vgs(th) (Max) @ Id :

3.5V @ 3.3mA

Pulsed Drain Current-Max (IDM) :

297A

Terminal Position :

Single

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

83.2A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

37m Ω @ 33.1A, 10V

ECCN Code :

EAR99

Lead Free :

Lead Free

Mounting Type :

Through Hole

Series :

CoolMOS™ C6

JESD-609 Code :

e3

Turn On Delay Time :

22 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

7240pF @ 100V

Rise Time :

32ns

Max Dual Supply Voltage :

650V

Continuous Drain Current (ID) :

83.2A

Pin Count :

3