IPW65R019C7FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

19m Ω @ 58.3A, 10V

Power Dissipation-Max :

446W Tc

Series :

CoolMOS™ C7

Number of Elements :

1

Packaging :

Tube

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

446W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 2.92mA

Vgs (Max) :

±20V

Turn-Off Delay Time :

106 ns

Max Dual Supply Voltage :

650V

Number of Pins :

3

JESD-609 Code :

e3

Fall Time (Typ) :

5 ns

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Rise Time :

27ns

Mounting Type :

Through Hole

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Turn On Delay Time :

30 ns

Input Capacitance (Ciss) (Max) @ Vds :

9900pF @ 400V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Continuous Drain Current (ID) :

75A

Package / Case :

TO-247-3

Lead Free :

Lead Free

Mount :

Through Hole

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

496A

Number of Terminations :

3

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single