IPW60R330P6FKSA1
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- Mfr.Part #
- IPW60R330P6FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 12A TO247-3
- Stock
- 29,239
- In Stock ：
- 29,239
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-247-3
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 330mOhm @ 4.5A, 10V
- Drain to Source Resistance :
- 297mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 33 ns
- Series :
- CoolMOS™ P6
- Packaging :
- Tube
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rise Time :
- 7ns
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Published :
- 2008
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Rds On Max :
- 330 mΩ
- Continuous Drain Current (ID) :
- 12A
- Max Dual Supply Voltage :
- 600V
- Drain to Source Voltage (Vdss) :
- 600V
- Factory Lead Time :
- 12 Weeks
- Power Dissipation-Max :
- 93W Tc
- RoHS Status :
- RoHS Compliant
- Turn On Delay Time :
- 12 ns
- Mount :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4.5V @ 370μA
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Input Capacitance :
- 1.01nF
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Supplier Device Package :
- PG-TO247-3
- Datasheets
- IPW60R330P6FKSA1
N-Channel Tube 330mOhm @ 4.5A, 10V ±20V 1010pF @ 100V 22nC @ 10V 600V TO-247-3
IPW60R330P6FKSA1 Overview
A device's maximal input capacitance is 1010pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 297mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 600V, it can supply the maximum voltage from two sources.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPW60R330P6FKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns
single MOSFETs transistor is 297mOhm
a 600V drain to source voltage (Vdss)
IPW60R330P6FKSA1 Applications
There are a lot of Infineon Technologies
IPW60R330P6FKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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