IPW60R330P6
- Mfr.Part #
- IPW60R330P6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IPW60R330 - 600V COOLMOS N-CHANN
- Stock
- 4,647
- In Stock :
- 4,647
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 330mOhm @ 4.5A, 10V
- Factory Lead Time :
- 12 Weeks
- Rise Time :
- 7ns
- Turn On Delay Time :
- 12 ns
- Rds On Max :
- 330 mΩ
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 33 ns
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Input Capacitance :
- 1.01nF
- Series :
- CoolMOS™ P6
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 93W Tc
- Supplier Device Package :
- PG-TO247-3
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -55°C
- Continuous Drain Current (ID) :
- 12A
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 100V
- Mounting Type :
- Through Hole
- Drain to Source Resistance :
- 297mOhm
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 600V
- Vgs(th) (Max) @ Id :
- 4.5V @ 370μA
- Gate Charge (Qg) (Max) @ Vgs :
- 22nC @ 10V
- Package / Case :
- TO-247-3
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Datasheets
- IPW60R330P6

N-Channel Tube 330mOhm @ 4.5A, 10V ±20V 1010pF @ 100V 22nC @ 10V 600V TO-247-3
IPW60R330P6FKSA1 Overview
A device's maximal input capacitance is 1010pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 297mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 600V, it can supply the maximum voltage from two sources.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPW60R330P6FKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 33 ns
single MOSFETs transistor is 297mOhm
a 600V drain to source voltage (Vdss)
IPW60R330P6FKSA1 Applications
There are a lot of Infineon Technologies
IPW60R330P6FKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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