IPW60R299CP
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- Mfr.Part #
- IPW60R299CP
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 14,101
- In Stock ：
- 14,101
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 5.16mm
- Height :
- 21.1mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Published :
- 2011
- Polarity/Channel Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 290 mJ
- Number of Terminations :
- 3
- Turn On Delay Time :
- 10 ns
- Max Operating Temperature :
- 150°C
- Rise Time :
- 5ns
- Capacitance - Input :
- 1.1nF
- Min Operating Temperature :
- -55°C
- Drain to Source Breakdown Voltage :
- 650V
- Voltage - Rated DC :
- 600V
- Length :
- 16.03mm
- Turn-Off Delay Time :
- 40 ns
- Fall Time (Typ) :
- 5 ns
- Rds On Max :
- 299 mΩ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 12 Weeks
- Continuous Drain Current (ID) :
- 11A
- RoHS Status :
- RoHS Compliant
- Drain to Source Resistance :
- 299mOhm
- Lead Free :
- Lead Free
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- No
- Current Rating :
- 11A
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 600V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Power Dissipation-Max :
- 96W
- Terminal Form :
- THROUGH-HOLE
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Package / Case :
- TO-247-3
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 96W
- Datasheets
- IPW60R299CP
600V TO-247-3
IPW60R299CP Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 290 mJ.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 11A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 40 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 299mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.
IPW60R299CP Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 40 ns
single MOSFETs transistor is 299mOhm
a 600V drain to source voltage (Vdss)
IPW60R299CP Applications
There are a lot of Infineon
IPW60R299CP applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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