IPW60R280E6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

DS Breakdown Voltage-Min :

600V

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Drain-source On Resistance-Max :

0.28Ohm

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Through Hole

Pin Count :

3

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

40A

Power Dissipation-Max :

104W Tc

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 430μA

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Series :

CoolMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

284 mJ

Operating Mode :

ENHANCEMENT MODE

Published :

2008

Vgs (Max) :

±20V