IPW60R280C6

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.28Ohm

Turn-Off Delay Time :

100 ns

FET Type :

N-Channel

Packaging :

Tube

Pbfree Code :

yes

Number of Pins :

3

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

104W Tc

Fall Time (Typ) :

12 ns

Terminal Position :

Single

Max Dual Supply Voltage :

600V

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

40A

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

284 mJ

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 100V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Power Dissipation :

104W

Current - Continuous Drain (Id) @ 25°C :

13.8A Tc

Vgs(th) (Max) @ Id :

3.5V @ 430μA

Published :

2007

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

13.8A

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Series :

CoolMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

13 ns

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Rise Time :

11ns