IPW60R250CP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

RoHS Compliant

Published :

2011

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pin Count :

3

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 100V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Series :

CoolMOS™

Number of Elements :

1

Number of Pins :

3

Pulsed Drain Current-Max (IDM) :

40A

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Power Dissipation :

104W

Mounting Type :

Through Hole

ECCN Code :

EAR99

Vgs (Max) :

±20V

Package / Case :

TO-247-3

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.5V @ 440µA

Nominal Vgs :

3 V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.25Ohm

Drain to Source Breakdown Voltage :

600V

Continuous Drain Current (ID) :

12A

FET Type :

N-Channel

Transistor Element Material :

SILICON

Terminal Finish :

Tin

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

250m Ω @ 7.8A, 10V

Power Dissipation-Max :

104W Tc