IPW60R199CPFKSA1
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- Mfr.Part #
- IPW60R199CPFKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16A TO247-3
- Stock
- 24,194
- In Stock ：
- 24,194
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 600V
- Packaging :
- Tube
- Power Dissipation-Max :
- 139W Tc
- Max Dual Supply Voltage :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Published :
- 2008
- Power Dissipation :
- 139W
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 199m Ω @ 9.9A, 10V
- Series :
- CoolMOS™
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 5ns
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 1520pF @ 100V
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Current Rating :
- 16A
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 16A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 10 ns
- Turn-Off Delay Time :
- 50 ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-247-3
- Vgs(th) (Max) @ Id :
- 3.5V @ 660µA
- Datasheets
- IPW60R199CPFKSA1
N-Channel Tube 199m Ω @ 9.9A, 10V ±20V 1520pF @ 100V 43nC @ 10V TO-247-3
IPW60R199CPFKSA1 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1520pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 16A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 50 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 600V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPW60R199CPFKSA1 Features
a continuous drain current (ID) of 16A
the turn-off delay time is 50 ns
IPW60R199CPFKSA1 Applications
There are a lot of Infineon Technologies
IPW60R199CPFKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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