IPW60R190P6
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- Mfr.Part #
- IPW60R190P6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20.2A TO247
- Stock
- 20
- In Stock ：
- 20
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2008
- Turn-Off Delay Time :
- 45 ns
- Power Dissipation-Max :
- 151W Tc
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 15 ns
- Avalanche Energy Rating (Eas) :
- 419 mJ
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Mode :
- ENHANCEMENT MODE
- Max Dual Supply Voltage :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Rise Time :
- 8ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Package / Case :
- TO-247-3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 100V
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 7 ns
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Pulsed Drain Current-Max (IDM) :
- 57A
- Series :
- CoolMOS™ P6
- Drain-source On Resistance-Max :
- 0.19Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 20.2A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 630μ
- JESD-609 Code :
- e3
- Factory Lead Time :
- 18 Weeks
- Packaging :
- Tube
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.6A, 10V
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 20.2A
- Datasheets
- IPW60R190P6
N-Channel Tube 190m Ω @ 7.6A, 10V ±20V 1750pF @ 100V 11nC @ 10V TO-247-3
IPW60R190P6FKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 419 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1750pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20.2A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 57A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 600V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPW60R190P6FKSA1 Features
the avalanche energy rating (Eas) is 419 mJ
a continuous drain current (ID) of 20.2A
the turn-off delay time is 45 ns
based on its rated peak drain current 57A.
IPW60R190P6FKSA1 Applications
There are a lot of Infineon Technologies
IPW60R190P6FKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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