IPW60R190P6
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- Mfr.Part #
- IPW60R190P6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 20.2A TO247
- Stock
- 20
- In Stock ：
- 20
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 419 mJ
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 7.6A, 10V
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-247-3
- JESD-609 Code :
- e3
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 20.2A Tc
- Turn On Delay Time :
- 15 ns
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 1750pF @ 100V
- Continuous Drain Current (ID) :
- 20.2A
- Max Dual Supply Voltage :
- 600V
- Pulsed Drain Current-Max (IDM) :
- 57A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 151W Tc
- Factory Lead Time :
- 18 Weeks
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Fall Time (Typ) :
- 7 ns
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Single
- Series :
- CoolMOS™ P6
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn-Off Delay Time :
- 45 ns
- Lead Free :
- Lead Free
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain-source On Resistance-Max :
- 0.19Ohm
- Vgs(th) (Max) @ Id :
- 4.5V @ 630μ
- Rise Time :
- 8ns
- Published :
- 2008
- Datasheets
- IPW60R190P6
N-Channel Tube 190m Ω @ 7.6A, 10V ±20V 1750pF @ 100V 11nC @ 10V TO-247-3
IPW60R190P6FKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 419 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1750pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 20.2A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 45 ns.Peak drain current is 57A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 15 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 600V, it supports dual voltages up to the maximum.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IPW60R190P6FKSA1 Features
the avalanche energy rating (Eas) is 419 mJ
a continuous drain current (ID) of 20.2A
the turn-off delay time is 45 ns
based on its rated peak drain current 57A.
IPW60R190P6FKSA1 Applications
There are a lot of Infineon Technologies
IPW60R190P6FKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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