IPW60R190E6FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

yes

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

59A

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 100V

Vgs(th) (Max) @ Id :

3.5V @ 630μA

Mounting Type :

Through Hole

JESD-609 Code :

e3

Mount :

Through Hole

Continuous Drain Current (ID) :

20.2A

Max Dual Supply Voltage :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Series :

CoolMOS™

Terminal Finish :

Tin (Sn)

FET Type :

N-Channel

Published :

2008

JESD-30 Code :

R-PSFM-T3

Power Dissipation :

151W

Turn-Off Delay Time :

90 ns

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

8 ns

Number of Elements :

1

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Rise Time :

10ns

Terminal Position :

Single

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

12 ns

Power Dissipation-Max :

151W Tc