IPW60R125P6
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- Mfr.Part #
- IPW60R125P6
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR
- Stock
- 6,195
- In Stock ：
- 6,195
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.125Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 219W Tc
- Number of Terminations :
- 3
- Factory Lead Time :
- 18 Weeks
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 30A Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 960μA
- Terminal Position :
- Single
- Published :
- 2008
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 56nC @ 10V
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Halogen Free :
- Halogen Free
- Continuous Drain Current (ID) :
- 30A
- Terminal Finish :
- Tin (Sn)
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Avalanche Energy Rating (Eas) :
- 636 mJ
- JESD-30 Code :
- R-PSFM-T3
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 11.6A, 10V
- Pulsed Drain Current-Max (IDM) :
- 87A
- Packaging :
- Tube
- Series :
- CoolMOS™ P6
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2660pF @ 100V
- FET Type :
- N-Channel
- Max Dual Supply Voltage :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Datasheets
- IPW60R125P6
N-Channel Tube 125m Ω @ 11.6A, 10V ±20V 2660pF @ 100V 56nC @ 10V TO-247-3
IPW60R125P6XKSA1 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 636 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2660pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 87A.Powered by 600V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPW60R125P6XKSA1 Features
the avalanche energy rating (Eas) is 636 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 87A.
IPW60R125P6XKSA1 Applications
There are a lot of Infineon Technologies
IPW60R125P6XKSA1 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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