IPW60R125P6

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Mfr.Part #
IPW60R125P6
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR
Stock
6,195
In Stock :
6,195

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Case Connection :
DRAIN
JESD-30 Code :
R-PSFM-T3
Vgs(th) (Max) @ Id :
4.5V @ 960μA
Avalanche Energy Rating (Eas) :
636 mJ
Factory Lead Time :
18 Weeks
Pulsed Drain Current-Max (IDM) :
87A
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Terminations :
3
Published :
2008
Terminal Finish :
Tin (Sn)
Series :
CoolMOS™ P6
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-247-3
Mounting Type :
Through Hole
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain-source On Resistance-Max :
0.125Ohm
Transistor Application :
SWITCHING
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rds On (Max) @ Id, Vgs :
125m Ω @ 11.6A, 10V
Operating Mode :
ENHANCEMENT MODE
Gate Charge (Qg) (Max) @ Vgs :
56nC @ 10V
Lead Free :
Lead Free
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2660pF @ 100V
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Dual Supply Voltage :
600V
Continuous Drain Current (ID) :
30A
Mount :
Through Hole
FET Type :
N-Channel
Power Dissipation-Max :
219W Tc
Halogen Free :
Halogen Free
JESD-609 Code :
e3
Pbfree Code :
yes
Datasheets
IPW60R125P6
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPW60R125P6 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-247-3, Mounting Type:Through Hole, IPW60R125P6 pinout, IPW60R125P6 datasheet PDF, IPW60R125P6 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPW60R125P6 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPW60R125P6


N-Channel Tube 125m Ω @ 11.6A, 10V ±20V 2660pF @ 100V 56nC @ 10V TO-247-3

IPW60R125P6XKSA1 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 636 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2660pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 87A.Powered by 600V, it supports the maximal dual supply voltage.By using drive voltage (10V), this device helps reduce its overall power consumption.

IPW60R125P6XKSA1 Features


the avalanche energy rating (Eas) is 636 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 87A.


IPW60R125P6XKSA1 Applications


There are a lot of Infineon Technologies
IPW60R125P6XKSA1 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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